价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN3900UFA-7B | 9,490 | 5 | Cut Tape | ||||||||
| Verical | DMN3900UFA-7B | 1,735 | 1735 | |||||||||
| Arrow Electronics | DMN3900UFA-7B | 1,735 | 1735 | |||||||||
| DigiKey | DMN3900UFA-7BCT-ND | 13,973 | 1 | Cut Tape | ||||||||
| TME | DMN3900UFA-7B | 0 | 10K | 1h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2013-08-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
Diodes Inc.DMP21D5UFB4-7B
Mosfet, P-Ch, 20V, 0.7A, X2-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP21D5UFB4-7B
Diodes Inc.DMN2400UFB4-7
Trans MOSFET N-CH 20V 0.75A 3-Pin DFN T/R / MOSFET N-CH 20V 750MA DFN1006H4
描述
由其分销商提供的 Diodes Inc. DMN3900UFA-7B 的描述。
Mosfet, N-Ch, 30V, 0.55A, X2-Dfn0806 Rohs Compliant: Yes |Diodes Inc. DMN3900UFA-7B
DMN3900UFA Series 30 V 550 mA N-Channel Enhancement Mode Mosfet - X2-DFN0806-3
390mW(Ta) 8V 950mV@ 250¦ÌA 0.7nC@ 4.5 V 1N 30V 760m¦¸@ 200mA,4.5V 550mA 42.2pF@25V DFN
Trans MOSFET N-CH 30V 0.65A 3-Pin X2-DFN T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 8±V VGS
Diodes Inc SCT
Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 0.55A, X2-DFN0806;
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)650 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.5 kΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time23.4 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance42.2 pF
Max Operating Temperature150 °C
Max Power Dissipation390 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation490 mW
Rds On Max760 mΩ
Rise Time7.8 ns
Schedule B8541210080
Turn-Off Delay Time80.6 ns
Turn-On Delay Time10.5 ns