价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | DMN3033LSD-13 | 5,000 | 2500 | |||||||||
| Verical | DMN3033LSD-13 | 5,000 | 2500 | |||||||||
| DigiKey | 31-DMN3033LSD-13CT-ND | 760 | 1 | Cut Tape | ||||||||
| TME | DMN3033LSD-13 | 0 | 1 | 4h | ||||||||
| Avnet | DMN3033LSD-13 | 0 | 2500 | 1d |
备用零件
Price @ 1000
$ 0.335
$ 0.247
Stock
233,675
970,147
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOP
SOIC
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
6.9 A
7 A
Threshold Voltage
-
1.7 V
Rds On Max
20 mΩ
23 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2 W
1.6 W
Input Capacitance
725 pF
635 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
描述
由其分销商提供的 Diodes Inc. DMN3033LSD-13 的描述。
Transistor MOSFET Array Dual N-CH 30V 6.9A 8-Pin SOIC T/R
Dual N-Channel 30 V 22 mOhm Surface Mount Enhancement Mode Transistor SOIC-8
2W 20V 2.1V@ 250¦ÌA 13nC@ 10V 2N 30V 20m¦¸@ 6.9A,10V 6.9A 725pF@15V SOIC-8 5.3mm*4.1mm*1.5mm
Trans MOSFET N-CH 30V 6.9A Automotive 8-Pin SOP T/R
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight850.995985 mg
Technical
Continuous Drain Current (ID)6.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance33 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance725 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max20 mΩ
Resistance22 mΩ
Rise Time7 ns
Turn-Off Delay Time63 ns
Turn-On Delay Time11 ns
Dimensions
Height1.5 mm
Length5.3 mm
Width4.1 mm