价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | DMN2016UTS-13 | 22,500 | 2500 | 16h | ||||||||
| Newark | DMN2016UTS-13 | 76 | 1 | Cut Tape | ||||||||
| Verical | DMN2016UTS-13 | 22,500 | 2500 | |||||||||
| Arrow Electronics | DMN2016UTS-13 | 1,480 | 458 | |||||||||
| DigiKey | DMN2016UTS-13DICT-ND | 2,122 | 1 | Cut Tape |
相关零件
Diodes Inc.DMP2035UTS-13
Trans MOSFET P-CH 20V 6.04A 8-Pin TSSOP T/R / MOSFET 2P-CH 20V 6.04A 8TSSOP
NXP SemiconductorsPMGD130UN,115
Small Signal Field-Effect Transistor, 1.3A I(D), N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Diodes Inc. DMN2016UTS-13 的描述。
20V 8.58A 14.5mΩ@4.5V,9.4A 880mW 1V@250uA 2 N-Channel TSSOP-8-3.0mm MOSFETs ROHS
Dual N-Channel 20 V 14.5 mOhm Enhancement Mode Mosfet
Dual MOSFET, N Channel, 20 V, 20 V, 8.58 A, 8.58 A, 0.011 ohm
Trans MOSFET N-CH 20V 8.58A 8-Pin TSSOP T/R
Dual N-Channel Enhancement MOSFET TSSOP8
RS APAC
DiodesZetex NMOS, Vds=20 V, 8.6 A, TSSOP, , 8
Small Signal Field-Effect Transistor, 8.58A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, N-CH, 20V, 8.58A;
Mosfet Bvdss: 8V~24V Tssop-8 T&r 2.5K
N-Channel Mosfet, 20V VDS, 8±V VGS
Diodes Inc SCT
场效应管, MOSFET, 双路, N沟道, 20V, 8.58A;
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageTSSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight157.991892 mg
Technical
Continuous Drain Current (ID)8.58 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance14.5 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time16.27 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.495 nF
Max Operating Temperature150 °C
Max Power Dissipation880 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation880 mW
Rds On Max14.5 mΩ
Resistance14.5 mΩ
Rise Time11.66 ns
Schedule B8541210080
Turn-Off Delay Time59.38 ns
Turn-On Delay Time10.39 ns
Dimensions
Height1.025 mm
Length4.5 mm
Width3.1 mm