供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-13
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2014-06-30
LTD Date2014-12-31
描述
由其分销商提供的 NXP Semiconductors PMGD130UN,115 的描述。
Small Signal Field-Effect Transistor, 1.3A I(D), N-Channel, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) 6 Mosfet Array 1.2A 390mW 20V -55C~150C TJ
Trans MOSFET N-CH 20V 1.2A 6-Pin TSSOP T/R
20 V, dual N-channel Trench MOSFET
PMGD130UN - SMALL SIGNAL, SC-88
制造商别名
NXP Semiconductors 在全球拥有多个品牌，分销商可将其用作替代名称。NXP Semiconductors 也可称为以下名称：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技术规格
Physical
Case/PackageTSSOP
Contact PlatingTin
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)1.3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance118 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time7 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance83 pF
Max Operating Temperature150 °C
Max Power Dissipation390 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation390 mW
Rds On Max145 mΩ
Rise Time17 ns
Turn-Off Delay Time17 ns
Turn-On Delay Time5 ns