供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1997-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi MMBT5179 的描述。
MMBT5179 Series 12 V CE Breakdown .05 A NPN RF Transistor - SOT-23
Bipolar Transistors (BJT); MMBT5179; ON SEMICONDUCTOR; NPN; 3; 12 V; 50 mA
20nA 12V 225mW 50mA 25@3mA10V 900MHz 400mV@10mA1mA NPN -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236AB
onsemi NPN, SOT-23, , 50 mA, -12 V
SOT-23 ELEC PN5179 MARKED 3C <AZ
MMBT5179 - RF SMALL SIGNAL BIPOL
NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)20 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)12 V
Continuous Collector Current50 mA
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)2.5 V
Frequency2 GHz
Gain15 dB
Gain Bandwidth Product900 MHz
hFE Min25
Max Breakdown Voltage12 V
Max Collector Current50 mA
Max Frequency2 GHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency900 MHz
Voltage Rating (DC)12 V
Dimensions
Height1.11 mm
Length2.92 mm
Width1.3 mm