价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | BCP5616QTA | 0 | 1 | 1h | ||||||||
| Future Electronics | BCP5616QTA | 0 | 1K | Tape & Reel | ||||||||
| Avnet | BCP5616QTA | 0 | 1K | 11h | ||||||||
| Arrow Electronics | BCP5616QTA | 0 | 1K | |||||||||
| Farnell | BCP5616QTA | 0 | 5 | Cut Tape | 8h |
备用零件
Price @ 1000
$ 0.103
$ 0.125
$ 0.125
Stock
2,485,406
239,631
239,631
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT
SOT
Polarity
-
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
1 A
1 A
1 A
Transition Frequency
150 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
500 mV
hFE Min
25
100
100
Power Dissipation
-
2 W
2 W
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描述
由其分销商提供的 Diodes Inc. BCP5616QTA 的描述。
Single Bipolar Transistor, NPN, 80 V, 1 A, 2 W, SOT-223, 3 Pins, Surface Mount
NPN MEDIUM POWER TRANSISTOR IN SOT223 Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
80V 2W 100@150mA,2V 1A NPN SOT-223 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
BCP5616Q Series 80 V 1 A 2 W SMT NPN Medium Power Transistor - SOT-223-3
500mV@ 50mA,500mA NPN 2W 5V 100nA 100V 80V 1A SOT-223-3 6.5mm*3.5mm*1.65mm
General Purpose Transistors NPN Ic=1A Vceo=80V hfe=100~250 P=2W SOT223
Trans, Npn, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP5616QTA
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Terminals4
Technical
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
Schedule B8541290080
Transition Frequency150 MHz