价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BC857BLP-7B | 1,420 | 5 | Cut Tape | ||||||||
| TME | BC857BLP-7B | 0 | 1 | 4h | ||||||||
| Future Electronics | BC857BLP-7B | 0 | 10K | Tape & Reel | ||||||||
| Avnet | BC857BLP-7B | 0 | 10K | 1d | ||||||||
| Arrow Electronics | BC857BLP-7B | 0 | 10K |
备用零件
Price @ 1000
$ 0.092
$ 0.096
$ 0.096
Stock
699,179
236,528
236,528
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DFN
DFN
DFN
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-45 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
-250 mV
650 mV
650 mV
hFE Min
220
220
220
Power Dissipation
400 mW
250 mW
250 mW
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-16
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 Diodes Inc. BC857BLP-7B 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857BLP Series 45 V 0.1 A 400 mW PNP Small Signal Transistor - DFN1006-3
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:45V; Dc Collector Current:100Ma; Power Dissipation Pd:1W; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:100Mhz; Dc Current Gain Hfe:220Hfe Rohs Compliant: No
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageDFN
Contact PlatingGold
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage-45 V
Collector Emitter Saturation Voltage-250 mV
Collector Emitter Voltage (VCEO)45 V
Continuous Collector Current-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Gain Bandwidth Product100 MHz
hFE Min220
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation400 mW
Transition Frequency100 MHz
Dimensions
Height530 µm