备用零件
Price @ 1000
$ 1.187
$ 0.243
Stock
101,389
7,638
Authorized Distributors
2
1
Mount
Through Hole
-
Case/Package
TO-18
-
Polarity
NPN
-
Collector Emitter Breakdown Voltage
40 V
-
Max Collector Current
800 mA
-
Transition Frequency
250 MHz
-
Collector Emitter Saturation Voltage
300 mV
-
hFE Min
100
-
Power Dissipation
500 mW
-
描述
由其分销商提供的 Central Semiconductor 2N2222A 的描述。
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 500 mW, TO-18, Through Hole
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
Bulk Through Hole Single 3 Bipolar (BJT) Transistor 800mA 500mW 250MHz 285ns
2N Series 40 V 800 mA NPN Through Hole Silicon Transistor - TO-18
Trans GP BJT NPN 40V 0.8A 500mW 3-Pin TO-18 Box
制造商别名
Central Semiconductor 在全球拥有多个品牌，分销商可将其用作替代名称。Central Semiconductor 也可称为以下名称：
- CENTRAL SEMI
- CENTRAL
- Central Semiconductor Corp
- CSC
- CEN
- CENTRAL SEMICONDUCTO
- CENT
- CENTRAL SEMICONDUCTORS
- CENTRALSEM
- Central Semicon
- CENT SEMI
- CNTRALSEMI
- CENTRAL SEMICONDUCTOR CORPORATION
- CTLSEM
- CENTRAL SEMICOND
- CENTRAL SEMICONDUCTORS CORP
- Central Semiconductor Cor
- Central Semiconductor Inc
- CENTRAL SEMICONDUC
- CENTAL SEMI
- CENTRAL SEMI INC
- CENTILLIUM COMMUNICATIONS INC
- CENTRAL SEMI-CONDU
- NPN Central Semi
- CENTRAL SEMIN
- Central Semiconductor Corp.
技术规格
Physical
Body MaterialMetal
Case/PackageTO-18
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency250 MHz
Gain Bandwidth Product300 MHz
hFE Min100
Max Collector Current800 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)200 °C
Max Operating Temperature200 °C
Max Power Dissipation500 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation500 mW
Transition Frequency250 MHz
Dimensions
Height5.33 mm