Analog Devices ADG636YRU

1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch | IC SWITCH DUAL SPDT 14TSSOP

Analog Switch Dual SPDT 14-Pin TSSOP Tube

IC SWITCH SPDTX2 115OHM 14TSSOP

SPDT, 2 Func, 1 Channel, CMOS, PDSO14

The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V. This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds. The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package. Product Highlights Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range Leakage current <0.25 nA maximum at 85°C Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply Automotive temperature range: −40°C to +125°C Small 14-lead TSSOP package Applications Automatic test equipment Data acquisition systems Battery-powered instruments Communication systems Sample-and-hold systems Remote-powered equipment Audio and video signal routing Relay replacement Avionics