TRANSISTOR, NPN, MT-200; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency Typ ft:60MHz; Power Dissipation Pd:200W; DC Collector Current:17A; DC Current Gain hFE:50; Transistor Case Style:MT-200; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Av Current Ic:17A; Collector Emitter Voltage Vces:2V; Continuous Collector Current Ic Max:17A; Current Ib:5A; Current Ic Continuous a Max:17A; Current Ic hFE:5A; Device Marking:2SC3264; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:50MHz; Hfe Min:50; Junction Temperature Tj Max:150°C; No. of Transistors:1; Package / Case:MT-200; Power Dissipation Pd:200W; Power Dissipation Ptot Max:200W; Termination Type:Through Hole; Voltage Vcbo:230V