供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-08-29
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2017-04-18
LTD Date2017-10-18
描述
由其分销商提供的 onsemi 2SC3332T-AA 的描述。
Bipolar Transistor, 160V, 0.7A, Low VCE(sat) NPN Single NP
Bip Transistor 180V 700mA VCE(sat);0.4V max. NPN Single NP
Small Signal Bipolar Transistor
TRANS, NPN, HIGHV, 160V, 0.7A, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Typ Gain Bandwidth ft:120MHz; Power Dissipation Pd:700mW; DC Collector Current:700mA; DC Current Gain hFE:400; Transistor Case Style:TO-92; No. of Pins:3
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSIP
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)160 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency120 MHz
Gain Bandwidth Product120 MHz
hFE Min200
Max Breakdown Voltage160 V
Max Collector Current700 mA
Max Frequency120 MHz
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation700 mW
Schedule B8541210080
Transition Frequency120 MHz
Dimensions
Height5 mm
Length5 mm
Width4 mm