Infineon IRLML2502TRPBF

Name: Infineon IRLML2502TRPBF
Brand: Infineon
SKU: IRLML2502TRPBF
Price: 0.06357 USD
Availability: InStock

Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23

$ 0.123

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		IRLML2502TRPBF	612,000	3K						0.064	17h
Newark	2	26AC0678	612,000	3K	Tape & Reel	0.096	0.096	0.096	0.096	0.096
Future Electronics	2	6173881	660,000	3K	Tape & Reel					0.070
Rutronik		TMOSS6806	6,000	3K						0.094	21h
Rochester Electronics		IRLML2502TRPBF	10,481					0.110	0.092	0.082	14h

数据表和文档

下载 Infineon IRLML2502TRPBF 的数据表和制造商文档。

IHS

Datasheet9 页11 年前

Datasheet9 页22 年前

Newark

element14 APAC

iiiC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-10.69%

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InfineonIRLML2502TRPBF

InfineonIRLML2502PBF

Price @ 1000

$ 0.123

$ 0.105

Stock

10,628,985

211,620

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

4.2 A

Threshold Voltage

1.2 V

Rds On Max

45 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

1.25 W

Input Capacitance

740 pF

供应链

Lifecycle StatusNRND (Last Updated: 4 days ago)

描述

由其分销商提供的 Infineon IRLML2502TRPBF 的描述。

Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23

Maritex

MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.035Ohm;ID 4.2A;Micro3;PD 1.25W;VGS +/-12V

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 20 V, 4.2 A, 45 Milliohms, SOT-23, 3 Pins, Surface Mount

EBV Elektronik

20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 20V 4.2A 3-Pin SOT-23 T/R / HEXFET Power MOSFET

Win Source

HEXFET Power MOSFET Small Signal Field-Effect Transistor

ComSIT Distribution GmbH

Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Package / Case:Micro3; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.2V; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.045ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.2V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:33A; Current, Idss Max:1.0µA; External Depth:2.5mm; External Length / Height:1.12mm; N-channel Gate Charge:12nC; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:1G; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:26s; Time, Rise:10ns; Time, trr Typ:16ns; Transistors, No. of:1; Typ Capacitance Ciss:740pF; Typ Charge Qrr @ Tj = 25°C:8.6nC; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.6V; Width, External:3.05mm; Width, Tape:8mm

Farnell