Win Source 分立半导体

Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon

Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

Rectifier Diode, 1 Phase, 1 Element, 8A, 800V V(RRM), Silicon, TO-252AA

Silicon Carbide MOSFET, Single, N Channel, 7 A, 1.7 kV, 0.75 ohm, TO-247

MOSFET Housing type: TO-92 Polarity: N Variants: Depletion mode Power dissipation: 0.74 W

Rectifier Diode, 1 Phase, 2 Element, 170A, 400V V(RRM), Silicon

MOSFET, Single - N-Channel, 500V, 30A, 690W, TO-247

Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-247

Silicon Carbide Power MOSFET N-Channel 1200V 67A 3-Pin TO-247

SCR 800V 25A TO220 ISO / SCR 800V 25A(RMS) 350A 3-Pin(3+Tab) TO-220AB Isolated Tube