Future Electronics 分立半导体

SCHOTTKY POWER RECTIFIER Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 60V V(RRM), Silicon

SWITCHING DIODE Rectifier Diode, 1 Phase, 1 Element, 0.2A, 100V V(RRM), Silicon

Diode, Zener, Vr 10V, If 10MA, Pkg SOT-23 (TO-236), Vf 0.9V, Cj 130PF, Tj +150C, Ir 5MA

Single N−Channel Power MOSFET 60V, 150A, 2.4mΩ Power MOSFET 60V 140A 2.9 mΩ Single N−Channel SO-8FL Logic Level

Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 600 mA, 300 mW, SOT-23, Surface Mount

Diode, Zener, Vr 15V, If 200MA, Pkg Smb, Vf 1.5V, Tj +150DEGC, Pd 3W, Ir 25MA

Bipolar (BJT) Single Transistor, General Purpose, NPN, 300 V, 500 mA, 1.5 W, SOT-223, Surface Mount

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ

Diode, Zener, Vr 18V, If 10MA, Pkg SOT-23 (TO-236), Vf 0.9V, Cj 100PF, Tj +150C, Ir 5MA

Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1 A, 1.5 W, SOT-223, Surface Mount