Power Field-Effect Transistor, 0.9A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

N—channelchannel, 100V, 3.2A, Rds(on), 100MΩ@10V, 127MΩ@4.5V, 20VGS(±V)；2~4VTH(V) ENCAPSULATION：SOT23-6

MOSFET N-CH 150V 0.9A 6-TSOP / N-Channel 150 V 900mA (Ta) Surface Mount Micro6™(TSOP-6)

NChannel 100V 3.2A 95mΩ@10V TSOP-6

N-Ch MOSFET, 100V, 3.2A, 95mΩ@10V

TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。NChannel, 100V, 3.2A, RDS(ON), 95mΩ@10V, 102mΩ@4.5V,...