Gallium Nitride (GaN) Transistor, 650 V, 60 A, 0.032 ohm, 14.2 nC, GaNPX, Surface Mount

MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooled

RF Power Field-Effect Transistor, 1-Element, Gallium Nitride, N-Channel, High Electron Mobility FET

Trans MOSFET N-CH GaN 650V 60A 4-Pin ULGA T/R

RF Power Field-Effect Transistor, 1-Element, Gallium Nitride, N-Channel, High Electron Mobility FET

RF Power Field-Effect Transistor, 1-Element, Gallium Nitride, N-Channel, High Electron Mobility FET

650V GaN E-HEMT Evaluation Board