P—channelchannel, -30V, -4.8A, Rds(on), 49MΩ@10V, 54MΩ@4.5V, 20VGS(±V)；-1~-3VTH(V) ENCAPSULATION：SOT23-6

P—channelchannel, -30V, -4.8A, Rds(on), 49MΩ@10V, 54MΩ@4.5V, 20VGS(±V)；-1~-3VTH(V) ENCAPSULATION：SOT23-6

1INDIVIDUALPCHANNEL 20V 6A

Small Signal Field-effect Transi

Power Field-Effect Transistor, 6A I(D), 12V, 0.026ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET

40MΩ@4.5V, 3A 4.5A SOT-23-6