Vishay SIZ322DT-T1-GE3
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Especificações técnicas
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.29 mΩ
Drain to Source Voltage (Vdss)25 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels2
Power Dissipation3.7 W
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Dimensions
Height800 µm
Inventory History
3 month trend: -56.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documentos
Baixe as fichas de dados e a documentação do fabricante para Vishay SIZ322DT-T1-GE3.
Future Electronics
Engineering Resources
View Evaluation kits and Reference designs for Vishay SIZ322DT-T1-GE3.
Descrições
Descrições de Vishay SIZ322DT-T1-GE3 fornecidas pelos seus distribuidores.
TrenchFET Gen IV Power MOSFET N-Channel Dual 25V VDS +16V -12V VGS 30A ID 8-Pin
Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R
MOSFET Array Dual N-CH 25V 30A 8-Pin PowerPAIR
Mosfet, Dual N-Ch, 25V, 30A, Powerpair; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.00529Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Rohs Compliant: Yes |Vishay SIZ322DT-T1-GE3
MOSFET 2 N-CH 25V 30A 8-POWER33
DUAL N-CHANNEL 25-V (D-S) MOSF
Nomes alternativos do fabricante
Vishay possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Vishay também pode ser conhecido(a) pelos seguintes nomes:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -56.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificações técnicas
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.29 mΩ
Drain to Source Voltage (Vdss)25 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels2
Power Dissipation3.7 W
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Dimensions
Height800 µm
Documentos
Baixe as fichas de dados e a documentação do fabricante para Vishay SIZ322DT-T1-GE3.
Future Electronics