Vishay SI7852ADP-T1-GE3
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| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI7852ADP-T1-GE3 | 3.351 | 1 | Tape & Reel | 23h | ||||||||
| SI7852ADP-T1-GE3 | 3.000 | 3K | 1d | |||||||||
| SI7852ADP-T1-GE3CT-ND | 8.607 | 1 | Cut Tape | 1d | ||||||||
| SI7852ADP-T1-GE3 | 2.179 | 7 | 1d | |||||||||
| SI7852ADP-T1-GE3 | 2.179 | 1 | Cut Tape | 1d |
Especificações técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.825 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Manufacturer Package IdentifierS17-0173_SINGLE
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation5 W
Rds On Max17 mΩ
Resistance17 MΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time26 ns
Turn-On Delay Time16 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Inventory History
3 month trend: -54.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI7852ADP-T1-GE3.
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Descrições
Descrições de Vishay SI7852ADP-T1-GE3 fornecidas pelos seus distribuidores.
Single N-Channel 80 V 0.017 Ohm SMT TrenchFET Power Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 80V 12A 8-Pin PowerPAK SO T/R
N CHANNEL MOSFET, 80V, 30A, SOIC
Power Field-Effect Transistor, 12A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 80V 30A 62.5W 17mohm @ 10V
N-CH 80V 30A 17mOhm PPSO-8 RoHSconf
Product Description Demo for Development.
N CHANNEL MOSFET, 80V, 30A, SOIC; Transi; N CHANNEL MOSFET, 80V, 30A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:80V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4.5V; No. of Pins:8
Nomes alternativos do fabricante
Vishay possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Vishay também pode ser conhecido(a) pelos seguintes nomes:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -54.81%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificações técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.825 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Manufacturer Package IdentifierS17-0173_SINGLE
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation5 W
Rds On Max17 mΩ
Resistance17 MΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time26 ns
Turn-On Delay Time16 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Declarações de conformidade