Vishay SI4816BDY-T1-E3
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI4816BDY-E3 | 17.385 | 1 | Tape & Reel | 14h | ||||||||
| SI4816BDY-T1-E3 | 9.700 | 25 | 2d | |||||||||
| 3534765 | 5.000 | 2500 | Tape & Reel | 12h | ||||||||
| 61AC1935 | 2.465 | 1 | Cut Tape | 2d | ||||||||
| C1S803601527611 | 9.700 | 1 | Cut Tape | 1d |
Especificações técnicas
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)8.2 A
Drain to Source Resistance11.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels2
Number of Elements2
Rds On Max18.5 mΩ
Resistance18.5 mΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time31 ns
Turn-On Delay Time13 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documentos
Baixe as fichas de dados e a documentação do fabricante para Vishay SI4816BDY-T1-E3.
element14 APAC
TME
iiiC
Arrow Electronics
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI4816BDY-T1-E3.
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Descrições
Descrições de Vishay SI4816BDY-T1-E3 fornecidas pelos seus distribuidores.
Transistor MOSFET Array Dual N-CH 30V 5.8A/8.2A 8-Pin SOIC T/R
Avnet Japan
Dual N-Channel 30 V 18.5 mOhms Surface Mount Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
DUAL N CHANNEL MOSFET, 30V, SOIC; Transi; DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8.2A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0093ohm; Rds(on) Test Voltage Vgs:20V
Nomes alternativos do fabricante
Vishay possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Vishay também pode ser conhecido(a) pelos seguintes nomes:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificações técnicas
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)8.2 A
Drain to Source Resistance11.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels2
Number of Elements2
Rds On Max18.5 mΩ
Resistance18.5 mΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time31 ns
Turn-On Delay Time13 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Documentos
Baixe as fichas de dados e a documentação do fabricante para Vishay SI4816BDY-T1-E3.
element14 APAC
TME
iiiC
Arrow Electronics
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Declarações de conformidade