Vishay IRFBC20STRLPBF

Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - D2PAK-3
$ 1.187
Production
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IRFBC20STRLPBF0800
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Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Vishay IRFBC20STRLPBF.

IHS

Datasheet11 páginas4 anos atrás

Newark

Future Electronics

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Peças alternativas

Esta peça
Peças alternativas
VishayIRFBC20STRLPBF
VishayIRFBC20SPBF
Price @ 1000
$ 1.187
$ 1.255
Stock
12,352
49,785
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
2.2 A
2.2 A
Threshold Voltage
-
4 V
Rds On Max
4.4 Ω
4.4 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.1 W
3.1 W
Input Capacitance
350 pF
350 pF

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-06-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30

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Descrições

Descrições de Vishay IRFBC20STRLPBF fornecidas pelos seus distribuidores.

Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - D2PAK-3
Future Electronics
Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) D2PAK T/R
Verical
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:2.2A; On Resistance, Rds(on):4.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Newark

Imagens

Vishay
Newark
Future Electronics

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