onsemi NDS352AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ

MOSFET P-CH 30V 0.9A SSOT3 / Trans MOSFET P-CH 30V 0.9A 3-Pin SOT-23 T/R

P-Channel 30 V 0.5 O Surface Mount Field Effect Transistor - SSOT-3

MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:900mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS352P; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-2.5V

These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.