onsemi ISL9R860S3ST
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | ISL9R860S3ST | 0 | 1 | Cut Tape | 15h | |||||||
| Microchip USA | ISL9R860S3ST | 323 | 150 | Tray | 10h | |||||||
| Component Stockers USA | ISL9R860S3ST | 7 | 2d | |||||||||
| Win Source | WS-ISL9R860S3ST | 2.090 | 6 | 17h | ||||||||
| Worldway Electronics | ISL9R860S3ST | 6.053 | 7 | Tape & Reel | 15h |
Modelos CAD
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| FONTE | eCAD | mCAD | ARQUIVOS |
|---|---|---|---|
 SnapEDA | Pegada | Baixar | |
 Ultra Librarian | SímboloPegada | Baixar |
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Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2001-11-19
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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Descrições
Descrições de onsemi ISL9R860S3ST fornecidas pelos seus distribuidores.
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB
Rectifier Diode Switching 600V 8A 30ns 3-Pin(2+Tab) D2PAK T/R
DIODE, ULTRAFAST, 8A, 600V; Diode Type:Stealth Diode; Voltage, Vrrm:600V; Current, If AV:8A; Voltage, Vf Max:2.4V; Termination Type:SMD; Case Style:TO-263AB; SVHC:Cobalt dichloride; Current, Ifs Max:100A; Forward Voltage:2V; Max Reverse RecoveryTime, trr:18ns; Current, Ifrm:16A; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
The ISL9R860S3ST is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificações técnicas
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight1.31247 g
Technical
Average Rectified Current8 A
Capacitance30 pF
Current Rating8 A
Element ConfigurationSingle
Forward Current8 A
Forward Voltage2 V
Max Forward Surge Current (Ifsm)100 A
Max Operating Temperature175 °C
Max Output Current8 A
Max Power Dissipation85 W
Max Repetitive Reverse Voltage (Vrrm)600 V
Max Reverse Voltage (DC)600 V
Max Surge Current100 A
Min Operating Temperature-55 °C
Number of Elements1
Output Current8 A
PackagingCut Tape
Peak Non-Repetitive Surge Current100 A
Peak Reverse Current100 µA
PolarityStandard
Power Dissipation85 W
Recovery Time30 ns
Reverse Recovery Time30 ns
Reverse Standoff Voltage600 V
Reverse Voltage600 V
Schedule B8541100080
TerminationSMD/SMT
Voltage Rating (DC)600 V
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade