onsemi HGTG30N60C3D
$ 4.917
Obsolete
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Modelos CAD
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Modelos CAD
Baixe o símbolo, a pegada e os modelos 3D STEP de onsemi HGTG30N60C3D direto dos nossos confiáveis parceiros.
| FONTE | eCAD | mCAD | ARQUIVOS |
|---|---|---|---|
 EE Concierge | SímboloPegada | ||
 SnapEDA | Pegada | 3D | Baixar |
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Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 4.917
$ 2.73
Stock
138,467
18,889
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-247
-
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
63 A
63 A
Power Dissipation
208 W
-
Collector Emitter Saturation Voltage
1.5 V
-
Reverse Recovery Time
60 ns
-
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-08-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
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Descrições
Descrições de onsemi HGTG30N60C3D fornecidas pelos seus distribuidores.
600V,63A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
600 V, 63 A, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT,N CH,600V,30A,TO-247; DC Collector Current:63A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Max:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:63A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:208W; Package/Case:TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Especificações técnicas
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current63 A
Current Rating30 A
Element ConfigurationSingle
Fall Time275 ns
Max Collector Current63 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-40 °C
Number of Elements1
PolarityNPN
Power Dissipation208 W
Reverse Recovery Time60 ns
Rise Time45 ns
Schedule B8541290080
Turn-Off Delay Time320 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)600 V
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade