onsemi FQPF6N80C
$ 1.06
EOL
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Histórico de estoque
Tendência de 3 meses: -3.64%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 1.06
$ 0.913
Stock
338,113
191,219
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
5.5 A
2.8 A
Threshold Voltage
5 V
-
Rds On Max
2.5 Ω
2.6 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
51 W
47 W
Input Capacitance
1.31 nF
1.25 nF
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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Descrições
Descrições de onsemi FQPF6N80C fornecidas pelos seus distribuidores.
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F
N-Channel 800 V 2.5 Ohm Flange Mount Mosfet - TO-220F
800V 5.5A 2.5´Î@10V2.75A 51W 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.3A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.95ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: -3.64%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Especificações técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.31 nF
Max Operating Temperature150 °C
Max Power Dissipation51 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation51 W
Rds On Max2.5 Ω
Resistance2.5 Ω
Rise Time65 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time47 ns
Turn-On Delay Time26 ns
Voltage Rating (DC)800 V
Dimensions
Height9.19 mm
Length10.16 mm
Width4.7 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade