onsemi FQA90N15

N-Channel Power MOSFET, QFET®, 150V, 90A, 18mΩ, TO-3P
$ 3.015
EOL

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FQA90N15.

IHS

Datasheet8 páginas12 anos atrás
Datasheet0 páginashá 0 anos

onsemi

Farnell

Fairchild Semiconductor

element14 APAC

Histórico de estoque

Tendência de 3 meses:
-21.44%

Peças alternativas

Esta peça
Peças alternativas
Price @ 1000
$ 3.015
$ 2.95
Stock
271,538
132,859
Authorized Distributors
4
5
Mount
Through Hole
Through Hole
Case/Package
-
-
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
90 A
90 A
Threshold Voltage
4 V
-
Rds On Max
18 mΩ
18 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
375 W
6 W
Input Capacitance
8.7 nF
8.7 nF

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-05-26
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Descrições

Descrições de onsemi FQA90N15 fornecidas pelos seus distribuidores.

N-Channel Power MOSFET, QFET®, 150V, 90A, 18mΩ, TO-3P
150 V, 90 A, 18 MILLI OHM N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 90A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:150V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:90A; Resistance, Rds On:0.018ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3P; Termination ;RoHS Compliant: Yes
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

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Esta peça pode ser conhecida por estes números alternativos de peça:

  • FQA90N15.