onsemi FGL60N100BNTD
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FGL60N100BNTD.
Modelos CAD
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Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-17
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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1200V NPT IGBT Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-264AA
Descrições
Descrições de onsemi FGL60N100BNTD fornecidas pelos seus distribuidores.
IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
FGL60N100 Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264-3L
TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,60A I(C),TO-264
IGBT, NPT, TO-264; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):2.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1kV; Transistor Case Style:TO-264; No. of Pins:3Pins; Operatin
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
IGBT, NPT, TO-264; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1000V; Current Ic Continuous a Max:60A; Voltage, Vce Sat Max:2.9V; Power Dissipation:180W; Case Style:TO-264; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1000V; Current Ic @ Vce Sat:60A; Current, Icm Pulsed:120A; Power, Pd:180W; Time, Rise:320ns
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Product Highlights: High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificações técnicas
Physical
Case/PackageTO-264
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.756 g
Technical
Collector Emitter Breakdown Voltage1 kV
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)1 kV
Continuous Collector Current60 A
Current Rating60 A
Element ConfigurationSingle
Fall Time250 ns
Max Breakdown Voltage1 kV
Max Collector Current60 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation180 W
Reverse Recovery Time1.2 µs
Rise Time320 ns
Schedule B8541290080
Turn-Off Delay Time630 ns
Turn-On Delay Time140 ns
Voltage Rating (DC)1 kV
Dimensions
Height29 mm
Length20 mm
Width5 mm
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FGL60N100BNTD.
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade