onsemi FDZ197PZ

P-Channel PowerTrench® Thin WL-CSP MOSFET, 1.5V Specified, -20V, -3.8A, 64mΩ
$ 0.294
Obsolete
Ficha de dados
Página do fabricante

Preço e estoque

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Distribuidor
SKU
Mín.
Embalagem
Preço em massa
Rochester Electronics
2
FDZ197PZ
275.000
USD
0,297
0,247
0,220
21h
Verical
4
FDZ197PZ
15.000
1217
USD
0,275
Mouser
512-FDZ197PZ
1.246
1
Tape & Reel
USD
1,220
0,753
0,495
0,342
0,258
Microchip USA
FDZ197PZ
2.919
3500
USD
0,296
1d
Component Stockers USA
FDZ197PZ
80.949
USD
0,240
0,240
0,230
0,210
0,210
>1wk

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDZ197PZ.

IHS

Datasheet7 páginas18 anos atrás
Datasheet0 páginashá 0 anos

Newark

onsemi

Fairchild Semiconductor

Histórico de estoque

Tendência de 3 meses:
+0.00%
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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-06-03
Lifecycle StatusObsolete (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)

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Descrições

Descrições de onsemi FDZ197PZ fornecidas pelos seus distribuidores.

P-Channel PowerTrench® Thin WL-CSP MOSFET, 1.5V Specified, -20V, -3.8A, 64mΩ
onsemi
Transistor; Transistor Polarity:P Channe; Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:1.9W
element14 APAC
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
Fairchild Semiconductor

Imagens

element14 APAC
Rochester Electronics
element14

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