onsemi FDV303N
$ 0.074
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Histórico de estoque
Tendência de 3 meses: +4.37%
Modelos CAD
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0 peça disponível
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Cadeia de suprimentos
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrições
Descrições de onsemi FDV303N fornecidas pelos seus distribuidores.
TRANSISTOR, DIGITAL FET, N-CHANNEL, MOSFET, 25V, 0.68A, 0.35W, SOT-23
Power MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm, SOT-23, Surface Mount
DIGITAL FET, N-CHANNEL Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N DIGITAL SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 680mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -; Power Dissip
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 680 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 8 / Fall Time ns = 13 / Rise Time ns = 8.5 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
MOSFET, N, SOT-23, 25V, 680MA; Transistor Polarity:N Channel; Continuous Drain Current Id:680mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:680mA; Current Temperature:25°C; ESD HBM:6kV; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Pd:350mW; Pulse Current Idm:2A; SMD Marking:303; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: +4.37%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Especificações técnicas
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)680 mA
Current12 A
Current Rating680 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationSingle
Fall Time8.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation350 mW
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time8.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage800 mV
Turn-Off Delay Time17 ns
Turn-On Delay Time3 ns
Voltage20 V
Voltage Rating (DC)25 V
Dimensions
Height1.11 mm
Length2.92 mm
Width3.05 mm
Conformidade
Classificação ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade