onsemi FDPF33N25T

N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220F

Single N-Channel 250 V 0.094 Ohm 48 nC 37 W DMOS Flange Mount Mosfet - TO-220-3

Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 250V 33A TO-220F

TRANSISTOR, N-CHANNEL, UNIFET MOSFET, 250V, 33A, 94 MOHM, TO-220

250V 33A 37W 94m´Î@10V16.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.32°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220F; Pin Configuration:G(1),D(2),S(3); Power Dissipation Pd:94W; Power Dissipation Pd:94W; Pulse Current Idm:80A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V