onsemi FDN337N

N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ
$ 0.239
Production
Página do fabricanteFicha de dados

Preço e estoque

Ver todas as reduções de preço
DistributorSKUMinPkg
Future Electronics
2
FDN337N213.0003KTape & Reel
Avnet
3
FDN337N63.0003K
3d
Newark
4
FDN337N17.3371Cut Tape
Arrow Electronics
2
FDN337N841
Verical
2
FDN337N246.0003K

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDN337N.

element14 APAC

Datasheet5 páginas28 anos atrás
Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos

IHS

Upverter

onsemi

Farnell

Histórico de estoque

Tendência de 3 meses:
+46.72%
Powered bySpectra logo

Modelos CAD

Baixe o símbolo, a pegada e os modelos 3D STEP de onsemi FDN337N direto dos nossos confiáveis parceiros.

FONTEeCADmCADARQUIVOS
Component Search Engine
SímboloPegada
3DBaixar
EE Concierge
SímboloPegada
SnapEDA
Pegada
Baixar
O site do parceiro será aberto em uma nova aba ao baixar os seus modelos CAD
Ao baixar os modelos CAD do Octopart, você concorda com nossos Termos e Condições e Política de Privacidade.

Cadeia de suprimentos

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Peças relacionadas

onsemiFDN359BN
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.7A, 46mΩ
Detalhes
InfineonIRLML6346TRPBF
MOSFET Transistor, N Channel, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
Detalhes
onsemiNDS355N
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.6A, 125mΩ
Detalhes
onsemiFDN372S
Trans MOSFET N-CH 30V 2.6A 3-Pin SuperSOT T/R
Detalhes
InfineonIRLML9301TRPBF
Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55+150 deg.C; SMD; SOT23
Detalhes
InfineonIRLML2030TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Detalhes

Descrições

Descrições de onsemi FDN337N fornecidas pelos seus distribuidores.

N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ
onsemi
N-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SSOT-3
Future Electronics
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount
EBV Elektronik
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.2A; On Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes
Newark
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.2 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 8 / Fall Time ns = 4 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Distrelec
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Fairchild Semiconductor
MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:2.5A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; Device Marking:FDN337N; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.5W; Power, Pd:0.5W; SMD Marking:337; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:20V; Width, External:3.05mm; Width, Tape:8mm
Farnell

Imagens

element14 APAC
element14 APAC
TME
Distrelec
Newark
Newark
RS
iiiC
Future Electronics
Component Sense
Component Sense
Newark
TME
Component Sense
Rochester Electronics
Conrad
Megastar

Nomes alternativos do fabricante

onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • FDN 337 N
  • FDN337N.