onsemi FDMS7678

MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity: N Channel; Continuous Drain Curren
$ 0.416
Production
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DistributorSKUMinPkg
Newark
2
FDMS76781.3421Cut Tape
VericalFDMS76781.200832
Rochester ElectronicsFDMS76781.200
1d
DigiKey
2
FDMS7678CT-ND1.9901Cut Tape
Onlinecomponents.comFDMS76780750Bulk

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDMS7678.

Newark

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IHS

onsemi

element14 APAC

Histórico de estoque

Tendência de 3 meses:
-4.16%
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Peças alternativas

Esta peça
Peças alternativas
onsemiFDMS7678
ROHMRS1E200BNTB
ROHMRS1E200BNTB
Price @ 1000
$ 0.416
$ 0.503
$ 0.503
Stock
646,005
1,785,329
1,785,329
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
-
-
-
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
17.5 A
20 A
20 A
Threshold Voltage
1.5 V
-
-
Rds On Max
5.5 mΩ
3.9 mΩ
3.9 mΩ
Gate to Source Voltage (Vgs)
20 V
-
-
Power Dissipation
2.3 W
-
-
Input Capacitance
2.41 nF
3.1 nF
3.1 nF

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-04-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrições

Descrições de onsemi FDMS7678 fornecidas pelos seus distribuidores.

MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curren
Newark
N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ
onsemi
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
IHS
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Fairchild Semiconductor
MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
Farnell

Imagens

Farnell
LCSC
Rochester Electronics
LCSC

Nomes alternativos do fabricante

onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd