onsemi FDMC8588

Single N-Channel 25 V 6.9 mOhm 17 nC 2.4 W PowerTrench SMT Mosfet - POWER 33-8
$ 0.406
Production
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DistributorSKUMinPkg
Avnet
2
FDMC85881.011.0001773
8h
Verical
4
FDMC85883.000767
Rochester Electronics
2
FDMC85883.445.291
6h
Flip ElectronicsFDMC85881.011.000
>1wk
FarnellFDMC858803KTape & Reel
5h

Fichas técnicas e documentos

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onsemi

Datasheet8 páginas2 anos atrás
Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos

IHS

Farnell

Fairchild Semiconductor

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Cadeia de suprimentos

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrições

Descrições de onsemi FDMC8588 fornecidas pelos seus distribuidores.

Single N-Channel 25 V 6.9 mOhm 17 nC 2.4 W PowerTrench SMT Mosfet - POWER 33-8
Future Electronics
TAPE REEL/PT8 Thin gate, 25/12V, Nch Mosfet in PQFN33
Newark
N-Channel PowerTrench® MOSFET 25V, 40A, 5.7mΩ
onsemi
Trans MOSFET N-CH 25V 16.5A 8-Pin Power 33 T/R
Verical
Power Field-Effect Transistor, 16.5A I(D), 25V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
IHS
POWER FIELD-EFFECT TRANSISTOR, 1
ODG (Origin Data Global)
MOSFET N-CH 25V 16.5A/40A PWR33
Easev
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.
Fairchild Semiconductor

Imagens

LZChips
Future Electronics
Rochester Electronics

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