onsemi FDC6320C

Trans MOSFET N/P-CH 25V 0.22A/0.12A 6-Pin TSOT-23 T/R

DUAL N AND P CHANNEL , DIGITAL FET Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

900mW 8V@ N Channel,-8V@ P Channel 1.5V@ 250¦ÌA 0.4nC@ 4.5V 2N+2P 25V 4¦¸@ 400mA,4.5V 220mA,120mA 9.5pF@10V SOT 2.9mm*1.6mm*1.1mm

MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Cont Current Id N Channel:0.22A; Cont Current Id P Channel:120mA; Continuous Drain Current Id, N Channel:220mA; Continuous Drain Current Id, P Channel:-120mA; Current Id Max:220mA; Drain Source Voltage Vds, N Channel:25V; Drain Source Voltage Vds, P Channel:-25V; Module Configuration:Dual; On Resistance Rds(on), N Channel:3.8ohm; On Resistance Rds(on), P Channel:10.6ohm; On State Resistance N Channel Max:4ohm; On State Resistance P Channel Max:10ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device

These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.