onsemi FDB8880
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Cadeia de suprimentos
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-02-28
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Peças relacionadas
onsemiIRFW530ATM
Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Descrições
Descrições de onsemi FDB8880 fornecidas pelos seus distribuidores.
Trans MOSFET N-CH 30V 11A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 54A TO-263AB
N-Channel PowerTrench® MOSFET, 30V, 54A, 11.6mΩ
N-Channel 30 V 54 A 11.6 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
Power Field-Effect Transistor, 11A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:55W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:55W; Power Dissipation Pd:55W; SMD Marking:FDB8880; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1.2V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificações técnicas
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)11 A
Current Rating54 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.24 nF
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
PackagingCut Tape
Power Dissipation55 W
Rds On Max11.6 mΩ
Rise Time107 ns
Threshold Voltage2.5 V
Turn-Off Delay Time47 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)30 V
Dimensions
Height4.83 mm
Length10.67 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade