onsemi FCU4300N80Z
$ 0.556
EOL
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FCU4300N80Z | 8.758 | 18h | |||||||||
| Farnell | FCU4300N80Z | 0 | 1800 | Tube | 3h | |||||||
| Microchip USA | FCU4300N80Z | 377 | 300 | Tube | 10h | |||||||
| Cytech Systems | FCU4300N80Z | 1.506 | 18h | |||||||||
| QUARKTWIN TECHNOLOGY LTD | FCU4300N80Z | Contato | >1wk |
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-12-12
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
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Descrições
Descrições de onsemi FCU4300N80Z fornecidas pelos seus distribuidores.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 1.6 A, 4.3 Ω, IPAK
SuperFET2 800V 4300mOhm Zener - TO-251 (I-PAK) MOLDED, 3 LEAD OPTION AA
Trans MOSFET N-CH 800V 1.6A 3-Pin(3+Tab) IPAK Tube
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Especificações técnicas
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)1.6 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance4.3 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance355 pF
Max Operating Temperature150 °C
Max Power Dissipation27.8 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max4.3 Ω
Resistance4.3 Ω
Rise Time6.5 ns
Schedule B8541290080
Turn-Off Delay Time21 ns
Turn-On Delay Time10 ns
Conformidade
Classificação ambiental
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Declarações de conformidade