onsemi BS270

N-Channel MOSFET, Enhancement Mode, 60V, 400mA, 2Ω

N-Channel 60 V 2 Ohm Enhancement Mode Field Effect Transistor-TO-92-3

MOSFET Transistor, N Channel, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:400mA; On Resistance, Rds(on):1.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes

MOSFET, N, TO-92; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:0.4A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.1V; Case Style:TO-92; Termination Type:Through Hole; Current, Idm Pulse:2A; Device Marking:BS270; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:0.625W; Power, Pd:0.625W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 400mA, 60V. RDS(ON) = 2W@ VGS = 10V. High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.