Infineon SGP02N120XKSA1

Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 1200V 6.2A 62W TO220-3

SGP02N120 Series 1200 V 6.2 A 62 W Through Hole NPT IGBT - PG-TO-220-3

Igbt Single Transistor, 6.2 A, 3.1 V, 62 W, 1.2 Kv, To-220, 3

Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB

IGBT, NPT, 1200V, 6.2A, 62W, TO220-3; Transistor Type:IGBT; DC Collector Current:6.2A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:62W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Pulsed Current Icm:9.6A; Rise Time:21ns

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.