Infineon IRLR6225PBF
$ 2.55
Obsolete
Preço e estoque
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Distribuidores de estoque não autorizados
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Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 2.55
$ 0.621
Stock
56,492
926,846
Authorized Distributors
2
4
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
800 mV
-
Rds On Max
4 mΩ
4 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
63 W
63 W
Input Capacitance
3.77 nF
3.77 nF
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descrições
Descrições de Infineon IRLR6225PBF fornecidas pelos seus distribuidores.
Inductor RF Chip Wirewound 2.4nH 0.2nH 100MHz 20Q-Factor 850mA 50mOhm DCR 0402 Paper T/R
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; Logic Level
MOSFET,N CH,20V,124A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:20V; On Resistance Rds(on):3200µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:63W; Voltage Vgs Max:12V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.77 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation63 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
On-State Resistance4 mΩ
Package Quantity3000
Power Dissipation63 W
Rds On Max4 mΩ
Recovery Time53 ns
Rise Time37 ns
Threshold Voltage800 mV
Turn-Off Delay Time63 ns
Turn-On Delay Time9.7 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm
Conformidade
Classificação ambiental
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade