Infineon IRLR120NTRLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.185 Ohm; Id 10A; D-pak (TO-252AA); Pd 48W
$ 0.462
Obsolete
Página do fabricanteFicha de dados

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DistributorSKUMinPkg
Rochester ElectronicsIRLR120NTRLPBF12.412
15h
Arrow ElectronicsIRLR120NTRLPBF6.0003K
RS (Formerly Allied Electronics)IRLR120NTRLPBF03KBulk
4h
Farnell
3
IRLR120NTRLPBF31Cut Tape
15h
Win SourceWS-IRLR120NTRLPBF119.120285
15h

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Infineon IRLR120NTRLPBF.

IHS

Datasheet12 páginas11 anos atrás

Newark

RS (Formerly Allied Electronics)

Jameco

DigiKey

Histórico de estoque

Tendência de 3 meses:
+95.60%
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Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31

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Descrições

Descrições de Infineon IRLR120NTRLPBF fornecidas pelos seus distribuidores.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W
RS (Formerly Allied Electronics)
Single N-Channel 100 V 185 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
IRLR120NTRLPBF,MOSFET, 100V, 1 1A, 185 MOHM, 13.3 NC QG, LOG
Jameco
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:48W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRLR120NTRLPBF.
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 16 / Fall Time ns = 22 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48
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  • Infineon Technologies
  • INF
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  • INFIN
  • INFINION
  • INFI
  • INFENION
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  • INFIEON
  • INFINEON TECH
  • INFINEN
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  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • IRFIRLR120NTRLPBF
  • IRLR120NTRLPBF.
  • SP001568906