Infineon IRFR6215PBF
$ 2.08
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Peças relacionadas
InfineonIRFR6215TRPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
InfineonIRFR6215TRRPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
InfineonIRFR6215TRLPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
Descrições
Descrições de Infineon IRFR6215PBF fornecidas pelos seus distribuidores.
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
Single P-Channel 150 V 0.295 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA
-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -150V, 13A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):295mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-13A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:44A; SMD Marking:IRFR6215; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:-150V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Current Rating-13 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance295 mΩ
Drain to Source Voltage (Vdss)-150 V
Dual Supply Voltage-150 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance860 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance580 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max295 mΩ
Recovery Time240 ns
Resistance295 mΩ
Rise Time36 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-150 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade