Infineon IRFF330

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
$ 19.435
Production

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Infineon IRFF330.

IHS

Datasheet7 páginas25 anos atrás
Datasheet7 páginas7 anos atrás

Newark

Histórico de estoque

Tendência de 3 meses:
Restocked

Peças alternativas

Price @ 1000
$ 19.435
$ 40.8
$ 40.8
Stock
13,168
5,508
5,508
Authorized Distributors
2
1
1
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-39
-
-
Drain to Source Voltage (Vdss)
400 V
-
-
Continuous Drain Current (ID)
3 A
3 A
3 A
Threshold Voltage
-
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
25 W
25 W
25 W
Input Capacitance
-
-
-

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

Peças relacionadas

InfineonIRFF430
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Infineon2N6802
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
InfineonIRFF220
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Infineon2N6790
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
International RectifierJANTX2N6790
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
International Rectifier2N6786
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
InfineonIRFF130
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Descrições

Descrições de Infineon IRFF330 fornecidas pelos seus distribuidores.

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
IRFF330 Series 400 V 1.15 Ohm 33 nC Through Hole Hexfet Transistor - TO-39
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
N CHANNEL MOSFET, 400V, 3A TO-205AF; Tra; N CHANNEL MOSFET, 400V, 3A TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3

Nomes alternativos do fabricante

Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • IRFF330.