Infineon IRFB38N20DPBF

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;TO-220AB;PD 300W;VGS +/-30V

Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - TO-220-3

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Power MOSFET, N Channel, 200 V, 44 A, 0.054 ohm, TO-220AB, Through Hole

Trans MOSFET N-CH 200V 38A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 200V, 44A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:200V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:44A; Junction to Case Thermal Resistance A:0.47°C/W; On State resistance @ Vgs = 10V:54ohm; Package / Case:TO-220AB; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.