Infineon IRF9130

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
$ 19.613
Production

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Infineon IRF9130.

IHS

Datasheet7 páginas6 anos atrás
Datasheet7 páginas25 anos atrás
Datasheet7 páginas25 anos atrás

Histórico de estoque

Tendência de 3 meses:
-34.35%

Peças alternativas

Price @ 1000
$ 19.613
$ 52.8
$ 52.8
Stock
7,433
15,978
15,978
Authorized Distributors
3
1
1
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-3
TO-3
TO-3
Drain to Source Voltage (Vdss)
-100 V
-
-
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
-4 V
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
75 W
75 W
75 W
Input Capacitance
-
-
-

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrições

Descrições de Infineon IRF9130 fornecidas pelos seus distribuidores.

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2
Infineon SCT
100V, P-CHANNEL REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-11A; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-204AA ;RoHS Compliant: No
MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:75W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:81mJ; Current Iar:11A; Current Id Max:-11A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:50A; Repetitive Avalanche Energy Max:7.5mJ; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V; Weight:0.012kg

Nomes alternativos do fabricante

Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • IRF9130 .