Infineon IRF7815PBF
Obsolete
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Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 0.604
Stock
53,173
583,431
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
5.1 A
5.1 A
Threshold Voltage
4 V
-
Rds On Max
43 mΩ
43 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
1.647 nF
1.647 nF
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
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MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.24Ohm;ID -2.2A;SO-8;PD 2.5W;VGS +/-20V
Descrições
Descrições de Infineon IRF7815PBF fornecidas pelos seus distribuidores.
HEXFET Power MOSFET Small Signal Field-Effect Transistor
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
MOSFET Operating temperature: -55...+150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
Benefits: RoHS Compliant | Target Applications: Load Switch High Side
Trans MOSFET N-CH 150V 5.1A 8-Pin SO
MOSFET, 150V, 5A, 44MOHM, 25 NC QG, SO8
Power Field-Effect Transistor, 5.1A I(D), 150V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,W DIODE,N CH,150V,5.1A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)5.1 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance43 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time8.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.647 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance43 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max43 mΩ
Recovery Time62 ns
Rise Time3.2 ns
Threshold Voltage4 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8.4 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Conformidade
Classificação ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade