Infineon IRF7342QPBF

Mosfet, Power; Dual P-ch; Vdss -55V; Rds(on) 0.105 Ohm; Id -3.4A; SO-8; Pd 2W; Vgs +/-20
$ 0.94
Obsolete
Página do fabricanteFicha de dados

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DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRF7342QPBF0665Bulk
3h
Win SourceWS-IRF7342QPBF6.000115
11h
Worldway ElectronicsIRF7342QPBF19.3777
10h
SHENGYU ELECTRONICSIRF7342QPBF12.7181
10h
Run Hong ElectronicsIRF7342QPBF8.270
22h

Fichas técnicas e documentos

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IHS

Datasheet8 páginas11 anos atrás

RS (Formerly Allied Electronics)

Farnell

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-07-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-11-05
LTD Date2015-05-05

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Descrições

Descrições de Infineon IRF7342QPBF fornecidas pelos seus distribuidores.

MOSFET, Power;Dual P-Ch;VDSS -55V;RDS(ON) 0.105Ohm;ID -3.4A;SO-8;PD 2W;VGS +/-20
RS (Formerly Allied Electronics)
-55V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
International Rectifier
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IHS
MOSFET, PP SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual P; Voltage, Vds Typ:55V; Current, Id Cont:3.4A; On State Resistance:0.095ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:27A; Power Dissipation Pd:1.3W; Voltage, Vds:55V; Voltage, Vds Max:55V
Farnell

Imagens

Augswan
International Rectifier

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