Infineon IRF6665TR1PBF
$ 2.85
Obsolete
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Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
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Descrições
Descrições de Infineon IRF6665TR1PBF fornecidas pelos seus distribuidores.
DIGITAL AUDIO 100V SINGLE N-CHANNEL HEXFET POWER MOSFET, DIRECTFET SH PKG
DIGITAL AUDIO MOSFET Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, DIRECTFET, 100V, SH; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Base Number:6665; Current Id Max:3.4A; Package / Case:SH; Power Dissipation Pd:2.2mW; Pulse Current Idm:34A; SMD Marking:2.2; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
A Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes specifically designed for Class-D audio amplifier applications. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part nu
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- Infineon Technologies
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- INFINEON/IR
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
MountSurface Mount
Number of Pins5
Number of Terminals2
Technical
Continuous Drain Current (ID)4.2 A
Current Rating4.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance62 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time4.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance530 pF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-40 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation42 W
Rds On Max62 mΩ
Resistance62 MΩ
Rise Time2.8 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time14 ns
Turn-On Delay Time7.4 ns
Voltage Rating (DC)100 V
Dimensions
Height506 µm
Length4.826 mm
Width3.95 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade