Infineon IRF6617TRPBF
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6617TRPBF | 0 | 4800 | Bulk | 16h | |||||||
| Farnell | IRF6617TRPBF | 0 | 1 | Cut Tape | 22h | |||||||
| Microchip USA | IRF6617TRPBF | 243 | 600 | Bulk | 17h | |||||||
| Weyland Electronics Group Pte. Ltd. | IRF6617TRPBF | 4.800 | 1 | Tape & Reel | 1d | |||||||
| Win Source | WS-IRF6617TRPBF | 18.484 | 60 | 1d |
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
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Descrições
Descrições de Infineon IRF6617TRPBF fornecidas pelos seus distribuidores.
Single N-Channel 30 V 8.1 mOhm 17 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes., MG-WDSON-5, RoHS
Infineon SCT
Trans MOSFET N-CH Si 30V 14A 7-Pin Direct-FET ST T/R
MOSFET Devices; INFINEON; IRF6617TRPBF; 30 V; 14 A; 20 V; 2.1 W
N CH MOSFET, 30V, 14A, DIRECTFET ST
Power Field-Effect Transistor, 55A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRF6617 - 12V-300V N-CHANNEL POW
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0062Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.1 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time3.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs2.35 V
Number of Channels1
Number of Elements1
On-State Resistance8.1 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max8.1 mΩ
Rise Time34 ns
Schedule B8541290080
Threshold Voltage2.35 V
Turn-Off Delay Time12 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height620 µm
Length3.95 mm
Width3.95 mm
Conformidade
Classificação ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade