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Intersil RFP12N10L

Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail
$ 0.507
Obsolete

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Intersil RFP12N10L.

Histórico de estoque

Tendência de 3 meses:
+0.00%

Peças alternativas

Esta peça
Peças alternativas
Price @ 1000
$ 0.507
$ 0.539
Stock
1,454
355,642
Authorized Distributors
1
6
Mount
-
Through Hole
Case/Package
-
TO-220AB
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
-
2 V
Rds On Max
-
200 mΩ
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
60 W
60 W
Input Capacitance
-
900 pF

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1986-04-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)

Descrições

Descrições de Intersil RFP12N10L fornecidas pelos seus distribuidores.

Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail
Tube Through Hole N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 12A Tc 12A 60W 100V
Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:TO-220AB ;RoHS Compliant: Yes
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:30A; SMD Marking:RFP12N10L; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526.

Nomes alternativos do fabricante

Intersil possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Intersil também pode ser conhecido(a) pelos seguintes nomes:

  • INTER
  • INTERS
  • ISL
  • INTERSI
  • Intersil Corporation
  • INTERSIL CORP
  • INTESIL
  • INSL
  • INTR
  • INTERSL
  • INTS
  • Intersil (Renesas Electronics America)
  • Harris Semiconductor
  • INTERSIL/HARRIS
  • INTRSL
  • INTSL
  • INERSIL
  • HARRIS SEMI
  • Intersil (Renesas Electronics Corporation)
  • Intersil(Renesas Electronics)
  • INTERSIL CHINA LIMITED
  • Intersil / Renesas
  • INTERSIL/PBF
  • Harris / Intersil
  • INTERSIL A RENESAS COMPANY