N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 265
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